 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| inchange semiconductor isc product specification isc silicon npn power transistor 2SC898 description collector-emitter breakdown voltage- : v (br)ceo = 150v (min) low collector saturation voltage- : v ce(sat) = 1.5v(max.)@ i c = 6a applications designed for amplifier applications. absolute maximum ratings(t a =25 ) symbol parameter max unit v cbo collector-base voltage 150 v v ceo collector-emitter voltage 150 v v ebo emitter-base voltage 5 v i c collector current-continuous 7 a p c collector power dissipation @t c =25 80 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SC898 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 50ma; i b = 0 150 v v ce (sat) collector-emitter saturation voltage i c = 6a; i b = 1a b 1.5 v v be (sat) base-emitter saturation voltage i c = 6a; i b = 1a b 1.8 v i cbo collector cutoff current v cb = 150v; i e = 0 1.0 ma i ebo emitter cutoff current v eb = 5v; i c = 0 1.0 ma h fe dc current gain i c = 1a; v ce = 5v 50 isc website www.iscsemi.cn |
Price & Availability of 2SC898
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |